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KSC2755
KSC2755
RF AMP, FOR VHF &TV TUNER
* Low NF, High GPE * Forward AGC Capability to 30 dB * NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 5 20 150 150 -55 ~ 150 Units V V V mA mW C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol ICBO hFE fT CRE GPE IAGC NF Parameter Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Power Gain AGC Current Noise Figure Test Condition VCB=20V, IE=0 VCE=10V, IC=3mA VCE=10V, IC=3mA f=1MHz, VCB=10V, IE=0 VCE=10V, IC=3mA f=200MHz f=200MHz IE at GR= -30dB VCE=10V, IC=3mA f=200MHz 20 Min. 60 400 Typ. 120 600 0.3 23 -10 2.0 -12 0.3 0.5 Max. 0.1 240 MHz pF dB mA dB Units A
hFE Classification
Classification hFE R 60 ~ 120 Marking O 90 ~ 180 Y 120 ~ 240
H1 O
hFE grade
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2755
Typical Characteristics
IB = 120A IB = 140A IB = 100A
10
1000
VCE = 10V
IC[mA], COLLECTOR CURRENT
8
IB = 80A
6
hFE, DC CURRENT GAIN
100
IB = 60A
4
IB = 40A IB = 20A
10
2
0 0 2 4 6 8 10
1 0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10000
10000
VCE(sat)[mV], SATURATION VOLTAGE
IC = 10 IB
1000
VBE(sat)[mV], SATURATION VOLTAGE
IC = 10 IB
1000
100
10 0.1
1
10
100
100 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10
Cre[pF], REVERSE TRANSFER CAPACITANCE
VCE = 10 V
f = 1 MHz IE = 0
100
1
10 0.1
1
10
100
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. fT - IC
Figure 6. Cre - VCB
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2755
Typical Characteristics (Continued)
200
60
PC[mW], POWER DISSIPATION
40
150
bie[ms], SUSCEPTANCE
IC=3mA
20
5mA
f=100MHz
10mA 200MHz
200MHz300MHz 400MHz f=100MHz
0
100
300MHz
-20
50
-40
yid=gie + jbie VCE =10V
400MHz
0 0 25 50
o
75
100
125
150
175
200
-60 0 20 40 60 80 100 120
Ta[ C], AMBIENT TEMPERATURE
gie[ms], CONDUCTANCE
Figure 7. Power Derating
Figure 8. yie - f
0.0
25
f=100MHz
0 -0.4
bre[ms], SUSCEPTANCE
IC=3mA 200MHz
-0.8
bfe[ms], SUSCEPTANCE
400MHz 300MHz
-25
200MHz IC=10mA f=100MHz 3mA 300MHz 5mA 300MHz
5mA 300MHz 10mA
100MHz
-50
-1.2
400MHz
-75
400MHz
200MHz 100MHz
400MHz
-1.6
yre=gre + jbre VCE =10V
-100
yfe=gfe + jbfe VCE=10V
200MHz
-2.0 -0.1
0.0
0.1
0.2
0.3
0.4
-125 -50
-25
0
25
50
75
100
gre[ms], CONDUCTANCE
gfe[ms], CONDUCTANCE
Figure 9. yre - f
Figure 10. yfe - f
5
20
35
boe[ms], SUSCEPTANCE
NF[dB], NOISE FIGURE
4
yoe=goe + jboe VCE=10V
18 16 14 12 10 8 6 4
NF : f=200MHz VCE=10V
30
Gpe
Gpe: f=200MHz 25 VCE=10V
Gpe[dB], POWER GAIN
20 15 10 5 0 -5
3
400MHz
2
IC=3mA 5mA
1
300MHz 200MHz
f=100MHz 10mA
0 0.00 0.25 0.50 0.75 1.00 1.25
NF
2 0 -10 -15
0
2
4
6
8
10
goe[ms], CONDUCTANCE
IC[mA], COLLECTOR CURRENT
Figure 11. yoe - f
Figure 12. Gpe, NF - IC
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2755
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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